Electron beam lithography (EBL) is a nanofabrication technique that uses a focused beam of electrons to pattern materials at the nanoscale. It is commonly used in the fabrication of semiconductor devices, nanophotonics, and nanoelectronics. The electron beam is generated by an electron gun and focused onto a sample using magnetic lenses. The beam is then scanned over the sample to create patterns with sub-10 nm resolution. EBL is a versatile technique that can be used to pattern a wide range of materials, including metals, semiconductors, and polymers.